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101.
Abstract— Quick, stable transition from splay‐to‐bend alignment in optically compensated bend (OCB) mode is crucial for practical use. This has been achieved by surface treating part of a pixel with a chiral dopant to induce a twist alignment while controlling the twist direction. The effectiveness of this new method was confirmed in a prototype TFT‐LCD panel.  相似文献   
102.
The crystalline structure of the heat‐sealed part of oriented polypropylene (OPP) and cast polypropylene (CPP) films was investigated by differential scanning calorimetry, Fourier transform infrared spectroscopy, and thermal mechanical analysis (TMA). The relationship between the crystalline structure and the mechanical properties was analyzed. It was found that the high total crystallinity of both OPP and CPP gave rise to good mechanical properties and that the orientation of the crystalline structure in the OPP film also was an important factor. The optimum condition for heat sealing was the temperature at which total crystallinity was highest while still retaining the crystalline orientation of OPP. The assessment of crystalline orientation by TMA is an innovation initiated by the authors. © 2005 Wiley Periodicals, Inc. J Appl Polym Sci 99: 513–519, 2006  相似文献   
103.
Failure criteria of the heat‐sealed part of oriented polypropylene (OPP) and cast polypropylene (CPP) heat seals made by an impulse type heat‐sealing machine were investigated. Circular notches and precracks were introduced to direct failure to specific areas such as inside the seal, at the border, or at the unsealed part. The notched strength as a function of heat‐sealing temperature revealed that the seals were stronger in the transverse direction (TD) as compared with the machine direction (MD). Tensile failure that occurred inside the heat seal is more sensitive to sealing temperature, whereas that at the unsealed part is immune. The stress intensity factor (K1) is generally higher along the TD. At high sealing temperatures, i.e. above 150°C, orientation in the OPP film is relaxed and this results in consistently low mechanical properties at this temperature range. This morphology was revealed by studies of crystalline orientation state and FTIR imaging. POLYM. ENG. SCI., 46:205–214, 2006. © 2005 Society of Plastics Engineers  相似文献   
104.
This paper presents a new switching control scheme for braking resistors (BR) using fuzzy logic to enhance overall stability of electric power systems. In addition, the coordination with an SVC is also considered to achieve a wider stable region. The braking resistor is set on one of the generator busbars, where the real power output from the generator is measured to determine the firing-angle of the thyristor switch. The switching control scheme is simple so as not to require heavy computation on the microcomputer based switching controller. An SVC is set on one of the busbars in the system. The switching of the SVC uses a similar fuzzy logic control scheme to the one for the BR. Simulation results show the effectiveness of the proposed fuzzy logic switching control scheme  相似文献   
105.
This paper presents the experimental evaluation of an advanced fuzzy logic PSS on the analog network simulator at the Research Laboratory of Kyushu Electric Power Co., Inc. The proposed power system stabilizer (PSS) is set up by using a personal computer with A/D and D/A conversion interfaces. The personal computer based PSS was set on the analog network simulator to evaluate the effectiveness of the advanced fuzzy logic control scheme, and to provide sufficient data for the actual installation of the proposed PSS on hydro-units in the Kyushu Electric Power System. This paper also describes the actual installation of the proposed PSS on hydro-units in the Kyushu Electric Power System for the long term evaluation of the proposed PSS using its prototypes  相似文献   
106.
The reliability of InP-based HEMTs is studied, focussing on how it is affected by the doped layer material and gate recess structure. Bias-and-temperature stress tests reveal that fluorine-induced donor passivation in the recess region, formed adjacent to the gate electrode, causes the source resistance (Rs) to increase at large drain bias voltages. The increase in Rs can be prevented by using InP or InAlP as the carrier supply layer material instead of InAlAs. On the other hand, the increase in the drain resistance (Rd) does not depend on the material of the carrier supply layer, which suggests that a mechanism different from that in the case of Rs should be considered. It is also found that a deep gate recess suppresses the increase in Rd after long-term stressing.  相似文献   
107.
Metallurgical and Materials Transactions A - The effect of 0.03 and 0.08 at. pct Fe additions on the formation of secondary phases in an Al–1.1Mg–0.5Cu–0.3Si at. pct alloy was...  相似文献   
108.
An ultra-high-precision clock system for long time delay has been developed for picosecond time-resolved x-ray diffraction measurements using synchrotron radiation (SR) pulses and synchronized femtosecond laser pulses. The time delay control between pump laser pulse and the probe SR pulse was achieved by combining an in-phase quadrature modulator and a synchronous counter. This method allowed us to change the delay time by a nearly infinite amount while maintaining the precision of +/-8.40 ps. Time-resolved diffraction measurements using the delay control system were demonstrated for precise measurement of an acoustic velocity in a single crystal of gallium arsenide.  相似文献   
109.
The development of inversion domain networks consisting of basal‐plane and pyramidal‐plane inversion domain boundary (b‐IDB and p‐IDB) interfaces within grains in Sn‐Al dual‐doped ZnO (Zn0.98Sn0.01Al0.01O) polycrystalline ceramics has been confirmed using transmission electron microscopy. The atomic structure of the b‐IDB and p‐IDB interfaces has been analyzed using atomic‐resolution scanning transmission electron microscopy. The localization of Sn and Al at the respective sites of the b‐IDBs and p‐IDBs was confirmed by energy‐dispersive X‐ray spectroscopy. In contrast to Sn or Al single‐dopant addition to ZnO, which results in the formation of spinel phase precipitates without the development of inversion domain networks, Sn‐Al dual‐doping caused the suppression of spinel phase formation and the formation of monophasic inversion domain networks composed of RMO3(ZnO)n homologous phase compound members, where R and M represent dopants substituting at the b‐IDB and p‐IDB sites, with a general formula of SnAlO3(ZnO)n. The results of this study demonstrate that the formation of inversion domain networks in ZnO‐based ceramics can be stabilized via multiple‐dopant addition. This finding has potential implications for the modification of the bulk or nanoscale properties based on the choice of the specific dopants, R and M, the control of the ratio R:M and the value of n in the RMO3(ZnO)n homologous phase compound members constituting the inversion domain networks.  相似文献   
110.
The light transmittance of the gels of poly(vinyl alcohol) (PVA)/phenol/water solutions was examined for the entire range of phenol/water content. Excellent transparency was found for the gels with phenol contents of 70–95 vol %. In full consideration of the results for the transparency and melting temperature of the gels and the viscosity and gelation ability of solutions, the PVA solutions of 75 vol % phenol content were selected for the gel spinning. The maximum dynamic moduli of drawn filaments at 25°C (room temperature) were 42 GPa (15x) for atactic PVA and 45 GPa (14x) for syndiotacticity-rich PVA. © 1995 John Wiley & Sons, Inc.  相似文献   
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